MT53E384M32D2DS-046 AAT:E TR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Micron

Model:

MT53E384M32D2DS-046 AAT:E TR

Description:

IC DRAM 12GBIT 2.133GHZ 200WFBGA

Stock:

12716

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

2.133 GHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Memory type

Volatile

Random read

Voltage - Supply

1.1V

packing

series

Automotive, AEC-Q100

storage capacity

12Gb(384M x 32)

technology

LPDDR4

working temperature

-40°C ~ 105°C(TC)

Encapsulation/Housing

200-WFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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MT53E384M32D2DS-046 AAT:E TR（LPDDR4）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12716,Price reference "real-time change" China/Hongkong。 MT53E384M32D2DS-046 AAT:E TR package/specs, Download MT53E384M32D2DS-046 AAT:E TR、Datasheet。