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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    DDR3/    K4B1G1646I-BYNB

    K4B1G1646I-BYNB K4B1G1646I-BYNB

    K4B1G1646I-BYNB image
    The pictures are for reference only
    Brand:
    Samsung
    Model:
    K4B1G1646I-BYNB
    Description:
    K4B1G1646I-BYNB
    Stock:
    12690
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
    QQicoQ  Q：3469113929
    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Access time
    -
  • Access time
    -
  • Clock frequency
    -
  • Current - maximum
    -
  • DWPD
    -
  • Flash architecture
    -
  • Memory interface
    -
  • Memory type
    -
  • Random read
    -
  • Voltage - Supply
    1.35 V
  • packing
    -
  • series
    -
  • storage capacity
    1 Gb
  • technology
    -
  • working temperature
    0 ~ 85 °C
  • Encapsulation/Housing
    96FBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    -
  • Part status
    On sale
    • PDFicoDataSheet
    K4B1G1646I-BYNB（DDR3）BySamsungDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12690,Price reference "real-time change" China/Hongkong。 K4B1G1646I-BYNB package/specs, Download K4B1G1646I-BYNB、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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