MT40A1G8WE-083E AAT:B TR parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Micron

Model:

MT40A1G8WE-083E AAT:B TR

Description:

IC DRAM 8GBIT PARALLEL 78FBGA

Stock:

18875

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

1.2 GHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Paralleling

Memory type

Volatile

Random read

Voltage - Supply

1.14V ~ 1.26V

packing

TR,CT

series

Automotive, AEC-Q100

storage capacity

8Gb(1G x 8)

technology

SDRAM - DDR4

working temperature

-40°C ~ 105°C(TC)

Encapsulation/Housing

78-TFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

MT40A1G8WE-083E AAT:B TR（DDR4）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18875,Price reference "real-time change" China/Hongkong。 MT40A1G8WE-083E AAT:B TR package/specs, Download MT40A1G8WE-083E AAT:B TR、Datasheet。