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IC DRAM 12GBIT 2.133GHZ 200WFBGA MT53E384M32D2DS-046 AIT:E TR

MT53E384M32D2DS-046 AIT:E TR image
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Brand:
Model:
MT53E384M32D2DS-046 AIT:E TR
Description:
IC DRAM 12GBIT 2.133GHZ 200WFBGA
Stock:
19892
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
Contact UsContact Us
座机icoTel :0755-82988826
手机icoPhone:+86 19166251823(Wechat)
QQicoQ  Q:3469113929
QQicoEmail:online1@ssf-asia.com
产品参数icoParameters
  • Access time
    -
  • Access time
    -
  • Clock frequency
    2.133 GHz
  • Current - maximum
    -
  • DWPD
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    -
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    1.1V
  • packing
    TR
  • series
    Automotive, AEC-Q100
  • storage capacity
    12Gb(384M x 32)
  • technology
    LPDDR4
  • working temperature
    -40°C ~ 95°C(TC)
  • Encapsulation/Housing
    200-WFBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • PDFicoDataSheet
    MT53E384M32D2DS-046 AIT:E TR(LPDDR4)ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19892,Price reference "real-time change" China/Hongkong。 MT53E384M32D2DS-046 AIT:E TR package/specs, Download MT53E384M32D2DS-046 AIT:E TR、Datasheet。
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