MT29E512G08CMCCBH7-6ES:C TR parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ NAND FLASH/ MT29E512G08CMCCBH7-6ES:C TR

The pictures are for reference only

Brand:

Micron

Model:

MT29E512G08CMCCBH7-6ES:C TR

Description:

IC FLASH 512GBIT PAR 152TBGA

Stock:

10703

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

167 MHz

Memory format

Flash Memory

Memory interface

Paralleling

Memory type

nonvolatile

Voltage - Supply

2.7V ~ 3.6V

packing

series

storage capacity

512Gb(64G x 8)

working temperature

0°C ~ 70°C(TA)

Encapsulation/Housing

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

Write cycle time - words, pages

DataSheet

SearchMT29E512G08CMCCBH7-6ES:C TR

MT29E512G08CMCCBH7-6ES:C TR（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10703,Price reference "real-time change" China/Hongkong。 MT29E512G08CMCCBH7-6ES:C TR package/specs, Download MT29E512G08CMCCBH7-6ES:C TR、Datasheet。