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    Home/    Category/    NAND FLASH/    MT29F1T208EGCBBG1-37ES:B TR

    IC FLASH 1.125T PAR 272VBGA MT29F1T208EGCBBG1-37ES:B TR

    MT29F1T208EGCBBG1-37ES:B TR image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT29F1T208EGCBBG1-37ES:B TR
    Description:
    IC FLASH 1.125T PAR 272VBGA
    Stock:
    12712
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
    QQicoQ  Q：3469113929
    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Access time
    -
  • Clock frequency
    267 MHz
  • Memory format
    Flash Memory
  • Memory interface
    Paralleling
  • Memory type
    nonvolatile
  • Voltage - Supply
    2.7V ~ 3.6V
  • packing
    TR
  • series
    -
  • storage capacity
    1.125Tb(144G x 8)
  • working temperature
    0°C ~ 70°C(TA)
  • Encapsulation/Housing
    272-VFBGA
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • Write cycle time - words, pages
    -
    • PDFicoDataSheet
    MT29F1T208EGCBBG1-37ES:B TR（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12712,Price reference "real-time change" China/Hongkong。 MT29F1T208EGCBBG1-37ES:B TR package/specs, Download MT29F1T208EGCBBG1-37ES:B TR、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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