MT47H512M4THN-25E:M TR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Micron

Model:

MT47H512M4THN-25E:M TR

Description:

IC DRAM 2GBIT PARALLEL 63FBGA

Stock:

18038

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

15ns

Access time

400 ps

Clock frequency

400 MHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Paralleling

Memory type

Volatile

Random read

Voltage - Supply

1.7V ~ 1.9V

packing

series

storage capacity

2Gb(512M x 4)

technology

DDR2

working temperature

0°C ~ 85°C(TC)

Encapsulation/Housing

63-TFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

MT47H512M4THN-25E:M TR（DDR2）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18038,Price reference "real-time change" China/Hongkong。 MT47H512M4THN-25E:M TR package/specs, Download MT47H512M4THN-25E:M TR、Datasheet。