MT53B384M64D4EZ-062 WT ES:B TR parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ LPDDR4/ MT53B384M64D4EZ-062 WT ES:B TR

The pictures are for reference only

Brand:

Micron

Model:

MT53B384M64D4EZ-062 WT ES:B TR

Description:

IC DRAM 24GBIT 1600MHZ FBGA

Stock:

14448

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

1.6 GHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Memory type

Volatile

Random read

Voltage - Supply

1.1V

packing

series

storage capacity

24Gb(384M x 64)

technology

LPDDR4

working temperature

-30°C ~ 85°C(TC)

Encapsulation/Housing

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Part status

On sale

DataSheet

SearchMT53B384M64D4EZ-062 WT ES:B TR

MT53B384M64D4EZ-062 WT ES:B TR（LPDDR4）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14448,Price reference "real-time change" China/Hongkong。 MT53B384M64D4EZ-062 WT ES:B TR package/specs, Download MT53B384M64D4EZ-062 WT ES:B TR、Datasheet。