MT53B512M32D2DS-053 AAT:E parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Micron

Model:

MT53B512M32D2DS-053 AAT:E

Description:

IC DRAM 16GBIT 1866MHZ 200WFBGA

Stock:

10381

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

1866 MHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Memory type

Volatile

Random read

Voltage - Supply

1.1V

packing

pallet

series

Automotive, AEC-Q100

storage capacity

16Gb(512M x 32)

technology

SDRAM - Mobile LPDDR4

working temperature

-40°C ~ 105°C(TC)

Encapsulation/Housing

200-WFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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MT53B512M32D2DS-053 AAT:E（LPDDR4）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10381,Price reference "real-time change" China/Hongkong。 MT53B512M32D2DS-053 AAT:E package/specs, Download MT53B512M32D2DS-053 AAT:E、Datasheet。