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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    DRAM/    IS41LV16100B-60TL-TR

    IC DRAM 16MBIT PAR 44TSOP II IS41LV16100B-60TL-TR

    IS41LV16100B-60TL-TR image
    The pictures are for reference only
    Brand:
    ISSI
    Model:
    IS41LV16100B-60TL-TR
    Description:
    IC DRAM 16MBIT PAR 44TSOP II
    Stock:
    855
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    产品参数icoParameters
  • Access time
    30 ns
  • Clock frequency
    -
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    3V ~ 3.6V
  • Write cycle time - words, pages
    -
  • packing
    TR
  • series
    -
  • storage capacity
    16Mb(1M x 16)
  • working temperature
    0°C ~ 70°C(TA)
  • Encapsulation/Housing
    44-TSOP(0.400,10.16mm wide)
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IS41LV16100B-60TL-TR（DRAM）ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory855,Price reference "real-time change" China/Hongkong。 IS41LV16100B-60TL-TR package/specs, Download IS41LV16100B-60TL-TR、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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