DIODE GEN PURP 600V 6A DPAK NHPD660T4G
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Description:
DIODE GEN PURP 600V 6A DPAK
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Rapid recovery=< 500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
TO-252-3,DPak(2 feedthrough + splicing),SC-63
DataSheet
NHPD660T4G(Diode rectifier)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26621,Price reference "real-time change" China/Hongkong。 NHPD660T4G package/specs, Download NHPD660T4G、Datasheet。