DIODE GEN PURP 100V 200MA SC75 BAS16TT1G
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Description:
DIODE GEN PURP 100V 200MA SC75
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Small signal=< 200mA(Io),arbitrarily speed
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
BAS16TT1G(Diode rectifier)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory69714,Price reference "real-time change" China/Hongkong。 BAS16TT1G package/specs, Download BAS16TT1G、Datasheet。