NRVTS10120EMFST3G parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Model:

NRVTS10120EMFST3G

Description:

DIODE SCHOTTKY 120V 10A 5DFN

Stock:

48034

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.1

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different Vr and F

Current - reverse leakage at different Vr

30 µA @ 120 V

Current average rectification (Io)

10A

Diode type

Schottky barrier

Reverse recovery time (trr)

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Supplier device packaging

5-DFN(5x6)(8-SOFL)

Voltage DC reverse (Vr) (maximum)

120 V

Voltage at different If - forward (Vf)

820 mV @ 10 A

packing

series

Automotive, AEC-Q101

working temperature

Encapsulation/Housing

8-PowerTDFN,5 feedthrough

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NRVTS10120EMFST3G.pdf

NRVTS10120EMFST3G（Diode rectifier）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory48034,Price reference "real-time change" China/Hongkong。 NRVTS10120EMFST3G package/specs, Download NRVTS10120EMFST3G、Datasheet。