1N5811US parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Microchip

Model:

1N5811US

Description:

DIODE GEN PURP 150V 3A B-MELF

Stock:

33906

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.17

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different Vr and F

60pF @ 10V,1MHz

Current - reverse leakage at different Vr

5 µA @ 50 V

Current average rectification (Io)

Diode type

standard

Reverse recovery time (trr)

30 ns

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Supplier device packaging

B,SQ-MELF

Voltage DC reverse (Vr) (maximum)

150 V

Voltage at different If - forward (Vf)

875 mV @ 4 A

packing

bulk

series

working temperature

Encapsulation/Housing

SQ-MELF,B

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

1N5811US（Diode rectifier）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33906,Price reference "real-time change" China/Hongkong。 1N5811US package/specs, Download 1N5811US、Datasheet。