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DIODE GEN PURP 150V 3A B-MELF 1N5811US

1N5811US image
The pictures are for reference only
Brand:
Model:
1N5811US
Description:
DIODE GEN PURP 150V 3A B-MELF
Stock:
33906
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
Price:$1.17
The market price fluctuates. Please consult the customer service for the actual price
Contact UsContact Us
座机icoTel :0755-82988826
手机icoPhone:+86 19166251823(Wechat)
QQicoQ  Q:3469113929
QQicoEmail:online1@ssf-asia.com
产品参数icoParameters
  • Capacitance at different Vr and F
    60pF @ 10V,1MHz
  • Current - reverse leakage at different Vr
    5 µA @ 50 V
  • Current average rectification (Io)
    3A
  • Diode type
    standard
  • Reverse recovery time (trr)
    30 ns
  • Speed
    Rapid recovery=< 500ns,> 200mA(Io)
  • Supplier device packaging
    B,SQ-MELF
  • Voltage DC reverse (Vr) (maximum)
    150 V
  • Voltage at different If - forward (Vf)
    875 mV @ 4 A
  • packing
    bulk
  • series
    -
  • working temperature
    -
  • Encapsulation/Housing
    SQ-MELF,B
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    On sale
  • PDFicoDataSheet
    1N5811US(Diode rectifier)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33906,Price reference "real-time change" China/Hongkong。 1N5811US package/specs, Download 1N5811US、Datasheet。
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