DIODE GEN PURP 150V 300MA D-MELF JAN1N6638US
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Description:
DIODE GEN PURP 150V 300MA D-MELF
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Rapid recovery=< 500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
Military, MIL-PRF-19500/578
DataSheet
JAN1N6638US(Diode rectifier)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56602,Price reference "real-time change" China/Hongkong。 JAN1N6638US package/specs, Download JAN1N6638US、Datasheet。