JANS1N5617US parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Microchip

Model:

JANS1N5617US

Description:

DIODE GEN PURP 400V 1A D5A

Stock:

19118

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$11

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different Vr and F

35pF @ 12V,1MHz

Current - reverse leakage at different Vr

500 µA @ 400 V

Current average rectification (Io)

Diode type

standard

Reverse recovery time (trr)

150 ns

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Supplier device packaging

D-5A

Voltage DC reverse (Vr) (maximum)

400 V

Voltage at different If - forward (Vf)

1.6 V @ 3 A

packing

bulk

series

Military, MIL-PRF-19500/427

working temperature

Encapsulation/Housing

SQ-MELF,A

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

JANS1N5617US（Diode rectifier）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19118,Price reference "real-time change" China/Hongkong。 JANS1N5617US package/specs, Download JANS1N5617US、Datasheet。