DIODE GEN PURP 600V 35A DO203AB JANTXV1N1190
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Description:
DIODE GEN PURP 600V 35A DO203AB
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Standard recovery>500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
Military, MIL-PRF-19500/297
pedestal,Terminal installation
DataSheet
JANTXV1N1190(Diode rectifier)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52013,Price reference "real-time change" China/Hongkong。 JANTXV1N1190 package/specs, Download JANTXV1N1190、Datasheet。