STPSC10H12G2-TR parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ Diode rectifier/ STPSC10H12G2-TR

The pictures are for reference only

Brand:

Model:

STPSC10H12G2-TR

Description:

1200V, 10A, SILICON CARBIDE POWE

Stock:

16166

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.1

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different Vr and F

725pF @ 0V,1MHz

Current - reverse leakage at different Vr

60 µA @ 1200 V

Current average rectification (Io)

10A

Diode type

SiC Schottky

Reverse recovery time (trr)

0 ns

Speed

No recovery time > 500mA(Io)

Supplier device packaging

D2PAK HV

Voltage DC reverse (Vr) (maximum)

1200 V

Voltage at different If - forward (Vf)

1.5 V @ 10 A

packing

TR,CT

series

ECOPACK®2

working temperature

Encapsulation/Housing

TO-263-3,D²Pak(2 feedthrough + splicing),TO-263AB

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载STPSC10H12G2-TR.pdf

STPSC10H12G2-TR（Diode rectifier）BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16166,Price reference "real-time change" China/Hongkong。 STPSC10H12G2-TR package/specs, Download STPSC10H12G2-TR、Datasheet。