DIODE GEN PURP 600V 52.3A TO263 IDB30E60ATMA1
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Description:
DIODE GEN PURP 600V 52.3A TO263
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
Rapid recovery=< 500ns,> 200mA(Io)
TO-263-3,D²Pak(2 feedthrough + splicing),TO-263AB
DataSheet
IDB30E60ATMA1(Diode rectifier)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24716,Price reference "real-time change" China/Hongkong。 IDB30E60ATMA1 package/specs, Download IDB30E60ATMA1、Datasheet。