DIODE GEN PURP 1.2KV 15A WAFER SIDC10D120H8X1SA2
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Description:
DIODE GEN PURP 1.2KV 15A WAFER
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Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Standard recovery>500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
SIDC10D120H8X1SA2(Diode rectifier)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60608,Price reference "real-time change" China/Hongkong。 SIDC10D120H8X1SA2 package/specs, Download SIDC10D120H8X1SA2、Datasheet。