DMG1016V-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMG1016V-7

Description:

MOSFET N/P-CH 20V SOT563

Stock:

22049

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.09

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Parameters

Current at 25 ° C - continuous drain (Id)

870mA,640mA

Drain source voltage (Vdss)

20V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

0.74nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

60.67pF @ 16V

On resistance (maximum) for different Ids and Vgs

400 mΩ @ 600mA,4.5V

Power - maximum

530mW

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-563,SOT-666

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMG1016V-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22049,Price reference "real-time change" China/Hongkong。 DMG1016V-7 package/specs, Download DMG1016V-7、Datasheet。