IPG20N04S4L18AATMA1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ IPG20N04S4L18AATMA1

The pictures are for reference only

Brand:

Infineon

Model:

IPG20N04S4L18AATMA1

Description:

MOSFET_(20V 40V) PG-TDSON-8

Stock:

26021

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.11

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

20A(Tc)

Drain source voltage (Vdss)

40V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

15nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

25V

On resistance (maximum) for different Ids and Vgs

18 mΩ @ 17A,10V

Power - maximum

26W(Tc)

Vgs (th) (maximum) for different Ids

2.2V @ 8µA

packing

series

OptiMOS™

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerVDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount,Wettable wings

Part status

On sale

DataSheet

下载IPG20N04S4L18AATMA1.pdf

IPG20N04S4L18AATMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26021,Price reference "real-time change" China/Hongkong。 IPG20N04S4L18AATMA1 package/specs, Download IPG20N04S4L18AATMA1、Datasheet。