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    Home/    Category/    FET, MOSFET/    IRF7338PBF

    MOSFET N/P-CH 12V 6.3A/3A 8-SOIC IRF7338PBF

    IRF7338PBF image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IRF7338PBF
    Description:
    MOSFET N/P-CH 12V 6.3A/3A 8-SOIC
    Stock:
    22648
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    6.3A,3A
  • Drain source voltage (Vdss)
    12V
  • FET Type
    N and P Channel
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    8.6nC @ 4.5V
  • Input capacitance at different Vds (Ciss) (maximum)
    640pF @ 9V
  • On resistance (maximum) for different Ids and Vgs
    34 mΩ @ 6A,4.5V
  • Power - maximum
    2W
  • Vgs (th) (maximum) for different Ids
    1.5V @ 250µA
  • packing
    pipe
  • series
    HEXFET®
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IRF7338PBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory22648,Price reference "real-time change" China/Hongkong。 IRF7338PBF package/specs, Download IRF7338PBF、Datasheet。
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