MOSFET 4N-CH 500V 26A SP3 APTM50H14FT3G
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Description:
MOSFET 4N-CH 500V 26A SP3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
APTM50H14FT3G(FET, MOSFET)ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory10174,Price reference "real-time change" China/Hongkong。 APTM50H14FT3G package/specs, Download APTM50H14FT3G、Datasheet。