APTM10DSKM09T3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTM10DSKM09T3G

Description:

MOSFET 2N-CH 100V 139A SP3

Stock:

539

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$16.17

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

139A

Drain source voltage (Vdss)

100V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

350nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

9875pF @ 25V

On resistance (maximum) for different Ids and Vgs

10 mΩ @ 69.5A,10V

Power - maximum

390W

Vgs (th) (maximum) for different Ids

4V @ 2.5mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP3

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTM10DSKM09T3G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory539,Price reference "real-time change" China/Hongkong。 APTM10DSKM09T3G package/specs, Download APTM10DSKM09T3G、Datasheet。