MOSFET 2N-CH 30V 200MA SOT666 NX3020NAKV,115
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Description:
MOSFET 2N-CH 30V 200MA SOT666
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
NX3020NAKV,115(FET, MOSFET)ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25510,Price reference "real-time change" China/Hongkong。 NX3020NAKV,115 package/specs, Download NX3020NAKV,115、Datasheet。