ZXMC4559DN8TA parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

ZXMC4559DN8TA

Description:

MOSFET N/P-CH 60V 8SOIC

Stock:

6659

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.24

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

3.6A,2.6A

Drain source voltage (Vdss)

60V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

20.4nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1063pF @ 30V

On resistance (maximum) for different Ids and Vgs

55 mΩ @ 4.5A,10V

Power - maximum

1.25W

Vgs (th) (maximum) for different Ids

1V @ 250µA(min)

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

ZXMC4559DN8TA（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6659,Price reference "real-time change" China/Hongkong。 ZXMC4559DN8TA package/specs, Download ZXMC4559DN8TA、Datasheet。