DMN1029UFDB-13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMN1029UFDB-13

Description:

MOSFET 2N-CH 12V 5.6A 6UDFN

Stock:

9746

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.02

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Parameters

Current at 25 ° C - continuous drain (Id)

5.6A

Drain source voltage (Vdss)

12V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

19.6nC @ 8V

Input capacitance at different Vds (Ciss) (maximum)

914pF @ 6V

On resistance (maximum) for different Ids and Vgs

29 mΩ @ 5A,4.5V

Power - maximum

1.4W

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-UDFN Exposed Pad

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMN1029UFDB-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9746,Price reference "real-time change" China/Hongkong。 DMN1029UFDB-13 package/specs, Download DMN1029UFDB-13、Datasheet。