DMT3022UEV-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMT3022UEV-7

Description:

MOSFET BVDSS: 25V-30V POWERDI333

Stock:

11240

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.05

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Parameters

Current at 25 ° C - continuous drain (Id)

17A(Tc)

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

13.9nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

903pF @ 15V

On resistance (maximum) for different Ids and Vgs

22 mΩ @ 11A,10V

Power - maximum

900mW(Ta)

Vgs (th) (maximum) for different Ids

1.8V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerVDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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DMT3022UEV-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11240,Price reference "real-time change" China/Hongkong。 DMT3022UEV-7 package/specs, Download DMT3022UEV-7、Datasheet。