DMT6018LDR-7 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMT6018LDR-7

Description:

MOSFET BVDSS: 41V 60V V-DFN3030-

Stock:

26359

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.08

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Parameters

Current at 25 ° C - continuous drain (Id)

8.8A(Ta)

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

13.9nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

869pF @ 30V

On resistance (maximum) for different Ids and Vgs

17 mΩ @ 8.2A,10V

Power - maximum

1.9W

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerVDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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DMT6018LDR-7（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26359,Price reference "real-time change" China/Hongkong。 DMT6018LDR-7 package/specs, Download DMT6018LDR-7、Datasheet。