ZXMC4A16DN8TC parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

ZXMC4A16DN8TC

Description:

MOSFET N/P-CH 40V 4A/3.6A 8SOIC

Stock:

3020

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

5.2A(Ta),4.7A(Ta)

Drain source voltage (Vdss)

40V

FET Type

N and P Channel Complementary type

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

17nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

770pF @ 40V,1000pF @ 20V

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 4.5A,10V,60 mΩ @ 3.8A,10V

Power - maximum

2.1W

Vgs (th) (maximum) for different Ids

1V @ 250mA(min)

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

ZXMC4A16DN8TC（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3020,Price reference "real-time change" China/Hongkong。 ZXMC4A16DN8TC package/specs, Download ZXMC4A16DN8TC、Datasheet。