DMG4932LSD-13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMG4932LSD-13

Description:

MOSFET 2N-CH 30V 9.5A 8SO

Stock:

31513

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

9.5A

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

42nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1932pF @ 15V

On resistance (maximum) for different Ids and Vgs

15 mΩ @ 9A,10V

Power - maximum

1.19W

Vgs (th) (maximum) for different Ids

2.4V @ 250µA

packing

TR,CT

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMG4932LSD-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31513,Price reference "real-time change" China/Hongkong。 DMG4932LSD-13 package/specs, Download DMG4932LSD-13、Datasheet。