DMN3012LFG-13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMN3012LFG-13

Description:

MOSFET 2 N-CH 30V POWERDI3333

Stock:

13573

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

20A(Tc)

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

6.1nC @ 4.5V,12.6nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

850pF @ 15V,1480pF @ 15V

On resistance (maximum) for different Ids and Vgs

12 mΩ @ 15A,5V,6 mΩ @ 15A,5V

Power - maximum

2.2W

Vgs (th) (maximum) for different Ids

2.1V @ 250µA,1.15V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerLDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

DMN3012LFG-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13573,Price reference "real-time change" China/Hongkong。 DMN3012LFG-13 package/specs, Download DMN3012LFG-13、Datasheet。