IRF9362TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF9362TRPBF

Description:

MOSFET 2P-CH 30V 8A 8SOIC

Stock:

26643

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.2

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

30V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

39nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1300pF @ 25V

On resistance (maximum) for different Ids and Vgs

21 mΩ @ 8A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2.4V @ 25µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IRF9362TRPBF.pdf

IRF9362TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26643,Price reference "real-time change" China/Hongkong。 IRF9362TRPBF package/specs, Download IRF9362TRPBF、Datasheet。