BSC0923NDIATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

BSC0923NDIATMA1

Description:

MOSFET 2N-CH 30V 17A/32A TISON8

Stock:

3082

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.27

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Parameters

Current at 25 ° C - continuous drain (Id)

17A,32A

Drain source voltage (Vdss)

30V

FET Type

2 N Channel(two)Asymmetric type

FET function

Logic level gate,4.5V drive

Gate charge (Qg) at different Vgs (maximum)

10nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1160pF @ 15V

On resistance (maximum) for different Ids and Vgs

5 mΩ @ 20A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

TR,CT

series

OptiMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSC0923NDIATMA1.pdf

BSC0923NDIATMA1（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3082,Price reference "real-time change" China/Hongkong。 BSC0923NDIATMA1 package/specs, Download BSC0923NDIATMA1、Datasheet。