MOSFET N-CHANNEL_30/40V IPG20N04S409ATMA1
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Description:
MOSFET N-CHANNEL_30/40V
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
DataSheet
IPG20N04S409ATMA1(FET, MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2332,Price reference "real-time change" China/Hongkong。 IPG20N04S409ATMA1 package/specs, Download IPG20N04S409ATMA1、Datasheet。