AUIRF7379QTR parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

AUIRF7379QTR

Description:

MOSFET N/P-CH 30V 5.8A/4.3A 8SO

Stock:

11224

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.18

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

5.8A,4.3A

Drain source voltage (Vdss)

30V

FET Type

N and P Channel

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

25nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

520pF @ 25V

On resistance (maximum) for different Ids and Vgs

45 mΩ @ 5.8A,10V

Power - maximum

2.5W

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载AUIRF7379QTR.pdf

AUIRF7379QTR（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory11224,Price reference "real-time change" China/Hongkong。 AUIRF7379QTR package/specs, Download AUIRF7379QTR、Datasheet。