MOSFET 2N-CH 50V 3A 8-SOIC IRF7103Q
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Description:
MOSFET 2N-CH 50V 3A 8-SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
IRF7103Q（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31277,Price reference "real-time change" China/Hongkong。 IRF7103Q package/specs, Download IRF7103Q、Datasheet。
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