IRF7555TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF7555TRPBF

Description:

MOSFET 2P-CH 20V 4.3A MICRO8

Stock:

13728

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

4.3A

Drain source voltage (Vdss)

20V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

15nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

1066pF @ 10V

On resistance (maximum) for different Ids and Vgs

55 mΩ @ 4.3A,4.5V

Power - maximum

1.25W

Vgs (th) (maximum) for different Ids

1.2V @ 250µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP,8-MSOP(0.118,3.00mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF7555TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13728,Price reference "real-time change" China/Hongkong。 IRF7555TRPBF package/specs, Download IRF7555TRPBF、Datasheet。