IRF7751TRPBF parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ IRF7751TRPBF

The pictures are for reference only

Brand:

Infineon

Model:

IRF7751TRPBF

Description:

MOSFET 2P-CH 30V 4.5A 8TSSOP

Stock:

32003

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

4.5A

Drain source voltage (Vdss)

30V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

44nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1464pF @ 25V

On resistance (maximum) for different Ids and Vgs

35 mΩ @ 4.5A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP(0.173,4.40mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF7751TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory32003,Price reference "real-time change" China/Hongkong。 IRF7751TRPBF package/specs, Download IRF7751TRPBF、Datasheet。