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    Home/    Category/    FET, MOSFET/    IRF8513TRPBF

    MOSFET 2N-CH 30V 8A/11A 8-SOIC IRF8513TRPBF

    IRF8513TRPBF image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IRF8513TRPBF
    Description:
    MOSFET 2N-CH 30V 8A/11A 8-SOIC
    Stock:
    27408
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    8A,11A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    8.6nC @ 4.5V
  • Input capacitance at different Vds (Ciss) (maximum)
    766pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    15.5 mΩ @ 8A,10V
  • Power - maximum
    1.5W,2.4W
  • Vgs (th) (maximum) for different Ids
    2.35V @ 25µA
  • packing
    TR,CT
  • series
    HEXFET®
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IRF8513TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory27408,Price reference "real-time change" China/Hongkong。 IRF8513TRPBF package/specs, Download IRF8513TRPBF、Datasheet。
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