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    Home/    Category/    FET, MOSFET/    IPG20N06S3L-23

    MOSFET 2N-CH 55V 20A TDSON-8 IPG20N06S3L-23

    IPG20N06S3L-23 image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    IPG20N06S3L-23
    Description:
    MOSFET 2N-CH 55V 20A TDSON-8
    Stock:
    3480
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    20A
  • Drain source voltage (Vdss)
    55V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    42nC @ 10V
  • Input capacitance at different Vds (Ciss) (maximum)
    2950pF @ 25V
  • On resistance (maximum) for different Ids and Vgs
    23 mΩ @ 16A,10V
  • Power - maximum
    45W
  • Vgs (th) (maximum) for different Ids
    2.2V @ 20µA
  • packing
    TR
  • series
    OptiMOS™
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    8-PowerVDFN
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IPG20N06S3L-23（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3480,Price reference "real-time change" China/Hongkong。 IPG20N06S3L-23 package/specs, Download IPG20N06S3L-23、Datasheet。
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    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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