IRF6723M2DTR1P parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF6723M2DTR1P

Description:

MOSFET 2N-CH 30V 15A DIRECTFET

Stock:

834

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

15A

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

14nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1380pF @ 15V

On resistance (maximum) for different Ids and Vgs

6.6 mΩ @ 15A,10V

Power - maximum

2.7W

Vgs (th) (maximum) for different Ids

2.35V @ 25µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

DirectFET™ isovolume MA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF6723M2DTR1P（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory834,Price reference "real-time change" China/Hongkong。 IRF6723M2DTR1P package/specs, Download IRF6723M2DTR1P、Datasheet。