IRF8852TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF8852TRPBF

Description:

MOSFET 2N-CH 25V 7.8A 8TSSOP

Stock:

1354

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

7.8A

Drain source voltage (Vdss)

25V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

9.5nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1151pF @ 20V

On resistance (maximum) for different Ids and Vgs

11.3 mΩ @ 7.8A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2.35V @ 25µA

packing

TR,CT

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP(0.173,4.40mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF8852TRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1354,Price reference "real-time change" China/Hongkong。 IRF8852TRPBF package/specs, Download IRF8852TRPBF、Datasheet。