MSCSM120AM08CT3AG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

MSCSM120AM08CT3AG

Description:

PM-MOSFET-SIC-SBD~-SP3F

Stock:

9077

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$96.82

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Parameters

Current at 25 ° C - continuous drain (Id)

337A(Tc)

Drain source voltage (Vdss)

1200V(1.2kV)

FET Type

2 N Channel(phase angle)

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

928nC @ 20V

Input capacitance at different Vds (Ciss) (maximum)

12.08pF @ 1000V

On resistance (maximum) for different Ids and Vgs

7.8 mΩ @ 160A,20V

Power - maximum

1.409kW(Tc)

Vgs (th) (maximum) for different Ids

2.8V @ 4mA

packing

pipe

series

working temperature

-40°C ~ 175°C(TJ)

Encapsulation/Housing

module

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

MSCSM120AM08CT3AG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9077,Price reference "real-time change" China/Hongkong。 MSCSM120AM08CT3AG package/specs, Download MSCSM120AM08CT3AG、Datasheet。