TC8020K6-G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

TC8020K6-G

Description:

MOSFET 6N/6P-CH 200V 56VQFN

Stock:

28838

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.9

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

200V

FET Type

6 N and 6 P Channel

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

50pF @ 25V

On resistance (maximum) for different Ids and Vgs

8 Ω @ 1A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2.4V @ 1mA

packing

pallet

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

56-VFQFN Exposed Pad

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

TC8020K6-G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28838,Price reference "real-time change" China/Hongkong。 TC8020K6-G package/specs, Download TC8020K6-G、Datasheet。