MSCSM170DUM039AG parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Microchip

Model:

MSCSM170DUM039AG

Description:

PM-MOSFET-SIC-SP6C

Stock:

1379

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$120.77

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Parameters

Current at 25 ° C - continuous drain (Id)

523A(Tc)

Drain source voltage (Vdss)

1700V(1.7kV)

FET Type

2 N Channel(two)Cosource

FET function

SiC

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power - maximum

Vgs (th) (maximum) for different Ids

packing

bulk

series

working temperature

-40°C ~ 175°C(TJ)

Encapsulation/Housing

module

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

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MSCSM170DUM039AG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1379,Price reference "real-time change" China/Hongkong。 MSCSM170DUM039AG package/specs, Download MSCSM170DUM039AG、Datasheet。