APTC60DDAM35T3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTC60DDAM35T3G

Description:

MOSFET 2N-CH 600V 72A SP3

Stock:

20957

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$17.24

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Parameters

Current at 25 ° C - continuous drain (Id)

72A

Drain source voltage (Vdss)

600V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

518nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

14000pF @ 25V

On resistance (maximum) for different Ids and Vgs

35 mΩ @ 72A,10V

Power - maximum

416W

Vgs (th) (maximum) for different Ids

3.9V @ 5.4mA

packing

bulk

series

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP3

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTC60DDAM35T3G（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20957,Price reference "real-time change" China/Hongkong。 APTC60DDAM35T3G package/specs, Download APTC60DDAM35T3G、Datasheet。