APTC60AM24SCTG parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Microchip

Model:

APTC60AM24SCTG

Description:

MOSFET 2N-CH 600V 95A SP4

Stock:

31181

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$35.51

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Parameters

Current at 25 ° C - continuous drain (Id)

95A

Drain source voltage (Vdss)

600V

FET Type

2 N Channel(phase angle)

FET function

Grade knot

Gate charge (Qg) at different Vgs (maximum)

300nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

14400pF @ 25V

On resistance (maximum) for different Ids and Vgs

24 mΩ @ 47.5A,10V

Power - maximum

462W

Vgs (th) (maximum) for different Ids

3.9V @ 5mA

packing

bulk

series

CoolMOS™

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP4

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Base installation

Part status

On sale

DataSheet

APTC60AM24SCTG（FET, MOSFET）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31181,Price reference "real-time change" China/Hongkong。 APTC60AM24SCTG package/specs, Download APTC60AM24SCTG、Datasheet。