MOSFET 2N-CH 40V 40A LFPAK56D BUK9K6R2-40E,115
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Description:
MOSFET 2N-CH 40V 40A LFPAK56D
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, TrenchMOS™
DataSheet
BUK9K6R2-40E,115(FET, MOSFET)ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory25856,Price reference "real-time change" China/Hongkong。 BUK9K6R2-40E,115 package/specs, Download BUK9K6R2-40E,115、Datasheet。